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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZsFDuKxG/E8Etx
Repositorysid.inpe.br/marciana/2004/11.11.14.00
Last Update2004:11.11.02.00.00 (UTC) administrator
Metadata Repositorysid.inpe.br/marciana/2004/11.11.14.00.14
Metadata Last Update2018:06.05.01.28.48 (UTC) administrator
Secondary KeyINPE-11530-PRE/6919
ISSN0003-6951
Citation KeySpringholzUetaFranBaue:1996:SpGrTh
TitleSpiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2(111) studied by scanning tunneling microscopy
ProjectTECMAT: Tecnologia de materiais
Year1996
MonthNov.
Access Date2024, May 19
Secondary TypePRE PI
Number of Files1
Size459 KiB
2. Context
Author1 Springholz, G.
2 Ueta, Antonio Yukio
3 Frank, N.
4 Bauer, G.
Resume Identifier1
2 8JMKD3MGP5W/3C9JGJU
Group1
2 LAS-INPE-MCT-BR
Affiliation1 Institute für Halbleiterphysik, Johannes Kepler Universität Linz
2 Instituto Nacional de Pesquisas Espaciais, Laboratório Associado de Sensores e Materiais (INPE.LAS)
3 Institute für Halbleiterphysik, Johannes Kepler Universität Linz
4 Institute für Halbleiterphysik, Johannes Kepler Universität Linz
JournalApplied Physics Letters
Volume69
Number19
Pages2822-2824
History (UTC)2004-11-11 16:00:16 :: sergio -> administrator ::
2006-09-28 22:36:53 :: administrator -> sergio ::
2008-01-07 12:50:04 :: sergio -> marciana ::
2008-02-26 16:43:16 :: marciana -> administrator ::
2018-06-05 01:28:48 :: administrator -> marciana :: 1996
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
KeywordsMATERIALS PHYSICS
Molecular bem epitaxy
UHV
Quantum
FÍSICA DE MATERIAIS
Expitaxia molecular
AbstractMolecular beam epitaxy of PbTe on BaF2 (111) is studied using UHV-scanning tunneling microscopy and atomic force microscopy. It is shown that PbTe growth is totally dominated by growth spirals formed around threading dislocations (TD) that originate from the growth on the 4.2% lattice-mismatched substrate. Due to dislocation annihilation, the TD density rapidly decreases with layer thickness, which results in a dramatic increase of the electron mobilities in the layers.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Spiral growth and...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
data URLhttp://urlib.net/ibi/6qtX3pFwXQZsFDuKxG/E8Etx
zipped data URLhttp://urlib.net/zip/6qtX3pFwXQZsFDuKxG/E8Etx
Languageen
Target Filespiral growth.pdf
User Groupadministrator
marciana
sergio
Visibilityshown
Copy HolderSID/SCD
Archiving Policyallowpublisher allowfinaldraft
Read Permissionallow from all
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
Citing Item Listsid.inpe.br/mtc-m21/2012/07.13.14.40.38 1
DisseminationWEBSCI; PORTALCAPES; COMPENDEX.
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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7. Description control
e-Mail (login)marciana
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